総合カタログ

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Processプロセス名ContentAu濃度（g/L）Au Purity析出純度（%）Hardness硬度（HV/HK*）As DepoDeposition Rate析出速度Time/µm（A/dm2）CD電流密度（A/dm2）Temp.操作温度（℃）pHFeatures特徴PRECIOUSFAB Au8100プレシャスファブ Au8100PRECIOUSFAB Au8400プレシャスファブ Au8400PRECIOUSFAB Au8405プレシャスファブ Au8405PRECIOUSFAB Au8500プレシャスファブ Au8500PRECIOUSFAB Au-MLA100プレシャスファブ Au-MLA100PRECIOUSFAB Au-MLA300プレシャスファブ Au-MLA300PRECIOUSFAB Au-BHG100プレシャスファブ Au-BHG100PRECIOUSFAB Au-GB5プレシャスファブ Au-GB5K-44K-4408 99.9950-80＊5.5min（0.3）0.1-0.7 6.08 99.9950-80 12 99.9950-80＊34sec（3.0）1.0-5.0 6.06 99.9980-120 8min（0.2）0.1-0.8 6.03.5 99.9950-80＊8min（0.2）0.1-0.4 4.73.5 99.9950-80 3.5 99.9130-200 9min（0.2）0.1-0.36.48 99.980-120 4min（0.4）0.1-0.75.88-10 99.9980-1201.7min（1.0）＜2.06.310 99.9980-12013sec（10）＜16 6.74min（0.4）0.2-1.0 6.08min（0.2）0.1-0.5 6.050-75Tl-free Tl不含有50-70Good throwing power 均一電着性良好65-75High-speed, Good throwing power均一電着性良好、高速対応50-70Low gold conc., Good throwing power均一電着性良好、低Au濃度55-65Low gold conc., Good throwing power 均一電着性良好、低Au濃度55-65Low gold conc., Good throwing power, Inhibits gold displacement 均一電着性良好、低Au濃度、置換反応抑制30-40High hardness 高硬度タイプ45-55For wafers ウエハ対応65 Standard type for rack plating ラック用標準タイプ75 High-speed jet plating 高速めっき対応Gold Plating Process/Cyanide Type Auめっきプロセス/シアンタイプ 03